Performance Evaluation of III-V Double-Gate n-MOSFETs

Due to their extremely high electron mobility (mu), III-V materials are being investigated as channel materials for high performance NMOS. Although their small transport mass leads to high injection velocity (v_inj), they have a low density of states (DOS) in the Gamma-valley, tending to reduce the inversion charge (Q_inv) and hence reduce drive current. Furthermore, the direct band gaps of III-V materials inherently give rise to very large band to band tunneling (BTBT) leakage current compared to Si. They also have a high permittivity and hence are more prone to short channel effects (SCE).