DocumentCode
2982564
Title
A Surface-Potential-Based Non-Charge-Sheet Core Model for Fully Depleted SOI MOSFET
Author
Zhang, Jian ; He, Jin ; Zhang, Lining ; Zheng, Rui ; Feng, Jie ; Fu, Yue ; Zhang, Xing
Author_Institution
Peking Univ., Beijing
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
569
Lastpage
572
Abstract
This paper presents a surface-potential-based non-charge-sheet core model for long-channel fully depleted SOI MOSFET. The formulation starts from a physics-based solution of the surface potential and an analytical non-charge-sheet drain current is provided to describe the fully-depleted SOI MOSFET behavior with the coupling between the front and back interfaces. The model calculation is compared with the numerical simulations, and exact agreement between them is observed for different geometry structures.
Keywords
MOSFET; silicon-on-insulator; back interfaces; depleted SOI MOSFET; front interfaces; silicon-on-insulator; surface-potential-based non-charge-sheet core model; Circuit testing; Coupling circuits; Geometry; Helium; Isolation technology; Iterative methods; MOSFET circuits; Numerical simulation; Predictive models; Solid modeling; SOI MOSFET; device physics; non-charge-sheet model; surface potential;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450188
Filename
4450188
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