• DocumentCode
    2982620
  • Title

    Improving the performance of band-to-band tunneling transistors by tuning the gate oxide and the dopant concentration

  • Author

    Sandow, C. ; Knoch, J. ; Urban, C. ; Mantl, S.

  • Author_Institution
    IBN-1, Forschungszentrum Julich GmbH, Julich
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    For the first time, we investigated the impact of varying doping concentration and gate oxide thickness on the performance of band-to-band tunneling transistors. The output saturation current revealed a strong dependence on both parameters. Consequently, we were able to improve the saturation current by nearly a factor of 50.
  • Keywords
    doping; tunnel transistors; tunnelling; band-to-band tunneling transistors; dopant concentration; gate oxide tuning; output saturation current; Boron; Doping profiles; Electrostatics; Laboratories; Mobile computing; Photonic band gap; Scattering; Semiconductor process modeling; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800743
  • Filename
    4800743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982620