• DocumentCode
    2982631
  • Title

    Inversion n-channel GaN MOSFETs with atomic-layer-deposited A12O3 as gate dielectrics

  • Author

    Chang, Y.C. ; Chang, W.H. ; Chiu, H.C. ; Shiu, K.H. ; Lee, C.H. ; Hong, M. ; Kwo, J. ; Hong, J.M. ; Tsai, C.C.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    81
  • Lastpage
    82
  • Abstract
    In this paper, inversion n-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a high k gate dielectric is demonstrated for the first time electrical performance close to those of the silicon based MOSFET. Device performance are markedly improved compared to the previous results of GaN MOSFETs with high k dielectrics.
  • Keywords
    III-V semiconductors; MOSFET; alumina; atomic layer deposition; gallium compounds; high-k dielectric thin films; semiconductor device models; ALD; GaN-Al2O3; atomic-layer-deposition; device electrical performance; high k gate dielectrics; inversion n-channel MOSFET device performance; silicon based MOSFET comparison; Atomic measurements; CMOS technology; Dielectric devices; Gallium nitride; High K dielectric materials; High-K gate dielectrics; MOS devices; MOSFETs; Photonic band gap; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800744
  • Filename
    4800744
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982631