Impact of Source/Drain Tie on a 30 nm Bottom Gate MOSFETs

This paper presents a non-classical architecture called the bottom gate MOSFET with source/drain tie (S/D-tied BG) to achieve enhanced device reliability. According to the 2-D numerical simulation, the proposed structure can effectively reduce the effects of self-heating because of its source/drain-tied scheme, resulting in improved thermal stability. In addition, S/D-tied BG MOSFET not only diminishes short-channel effects but also decreases source/drain series resistance, which is the major advantage over the conventional ultra-thin SOI.