Title :
Self-Consistent Modeling of Ultra Thin Body Double Gate MOSFET
Author :
Alam, M.K. ; Khosru, Quazi D M
Author_Institution :
Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
An accurate and efficient one dimensional self-consistent numerical model of double gate MOS structure is presented based on finite element method. The model is developed using FEMLAB considering wave function penetration effect into gate oxide. Hence, penetration effect is revealed and presented for full depleted double gate MOSFET. Accuracy of the model has been verified by comparing with established results.
Keywords :
MOS integrated circuits; finite element analysis; wave functions; FEMLAB; double gate MOS structure; self-consistent numerical modeling; ultrathin body double gate MOSFET; wave function penetration effect; Boundary conditions; CMOS process; Equations; Finite element methods; MOS devices; MOSFET circuits; Mathematical model; Numerical models; Quantum mechanics; Wave functions;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450196
