• DocumentCode
    2982770
  • Title

    Size Dependent Thermal Activation Study of Single InSb Nanowire Devices for High Speed and Low Power Digital Logic Applications

  • Author

    Khan, M. Ibrahim ; Penchev, Miroslav ; Lake, Roger ; Ozkan, Mehmed ; Ozkan, Mihrimah

  • Author_Institution
    Dept. of Mech. Eng., Univ. of California, Riverside, CA
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    InSb nanowire devices at different diameter range from 30 nm-200 nm using electrochemical deposition technique is demonstrated. Electrical properties of nanowires is investigated at different diameters for beyond CMOS applications with high speed and low power characteristics. In particular, InSb nanowire based FET devices is fabricated on Si substrate and presented.
  • Keywords
    III-V semiconductors; field effect transistors; indium compounds; semiconductor quantum wires; FET devices; InSb; Si; electrical properties; electrochemical deposition technique; nanowire devices; size 30 nm to 200 nm; Contact resistance; Electron mobility; FETs; Lithography; Logic devices; Nanoscale devices; Photonic band gap; Substrates; Temperature; Thermal engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800752
  • Filename
    4800752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982770