• DocumentCode
    2982789
  • Title

    Growth Of ZnO Nanorods by Hydrotherothermal Method Under Different Temperatures

  • Author

    Meen, T.H. ; Water, W. ; Chen, Y.S. ; Chen, W.R. ; Ji, L.W. ; Huang, C.J.

  • Author_Institution
    Nat. Formosa Univ., Yunlin
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    617
  • Lastpage
    620
  • Abstract
    In this study, the aqueous solution method was employed to synthesize one-dimensional well-aligned ZnO nano-array on ITO glass substrate. We can find that the dimension of ZnO nanorod will changes with different growth temperature. X-ray diffraction patterns show that the nanorods are high-quality crystals growing along [001] direction with a high consistent orientation perpendicular to the substrate while the growth temperature is equal to 80. SEM images show that the average diameters of ZnO nanorods are about 60-90 nm by changing growth temperature. The smallest diameter of ZnO nanorods is observed while the growth temperature is equal to 75 degc. The UV/Vis spectra analyses show the absorption peaks appear at 330 nm, 370 nm and 390 nm while growth temperature increases from 65 degc to 85 degc.
  • Keywords
    II-VI semiconductors; X-ray diffraction; crystal growth from solution; nanostructured materials; nanotechnology; scanning electron microscopy; semiconductor growth; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; ITO glass substrate; SEM images; UV-Vis spectral analysis; X-ray diffraction patterns; ZnO; ZnO nanorods growth; high-quality crystals; hydrothermal method; nanorods growth temperature; one-dimensional well-aligned ZnO nanoarray; size 60 nm to 90 nm; temperature 65 C to 85 C; temperature 75 C; wavelength 330 nm; wavelength 370 nm; wavelength 390 nm; Glass; Indium tin oxide; Nanoscale devices; Nanowires; Photovoltaic cells; Scanning electron microscopy; Substrates; Temperature; X-ray diffraction; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450200
  • Filename
    4450200