DocumentCode
2982794
Title
A capacitive fingerprint sensor with low-temperature poly-Si TFTs
Author
Hashido, R. ; Suzuki, A. ; Iwata, A. ; Ogawa, T. ; Okamoto, T. ; Satoh, Y. ; Inoue, M.
Author_Institution
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan
fYear
2001
fDate
7-7 Feb. 2001
Firstpage
250
Lastpage
251
Abstract
A capacitive fingerprint sensor using low-temperature poly-Si TFTs succeeds in fingerprint certification. The array area is 19.2×15 mm/sup 2/. Resolution is 423 dpi (60 μm pitch) using a structure with only one transistor and one sensor plate.
Keywords
arrays; capacitive sensors; field effect integrated circuits; fingerprint identification; silicon; thin film transistors; 1.2 W; 5 V; 500 kHz; Si; capacitive fingerprint sensor; fingerprint certification; low-temperature poly-Si TFTs; pixel transistor; polysilicon TFT; sensor array; sensor plate; soda glass substrate; Capacitive sensors; Costs; Electric potential; Fingerprint recognition; Fingers; Glass; Parasitic capacitance; Sensor arrays; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-6608-5
Type
conf
DOI
10.1109/ISSCC.2001.912625
Filename
912625
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