DocumentCode :
2982853
Title :
Anodization process of aluminum microelectrode for a single-electron transistor operating at room temperature
Author :
Muto, Tsuyoshi ; Kimura, Yasuo ; Niwano, Michio
Author_Institution :
Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
103
Lastpage :
104
Abstract :
A technology for fabricating nanostructures has been extensively studied in order to develop electronic or photonic devices based on new types of mechanisms such as quantum effects. There are generally two complementary approaches to fabrication of nanostructures. One is a top-down process as typified by a lithography technique widely used in LSI technology and the other is a bottom-up process such as a self-organization process. In the case of the conventional lithography technique, it is not easy to fabricate nanostructures although it is suitable for controlling their positions. In contrast, a self-organization process does not control positions of nanostructures though it can easily produce nanostructures. Therefore, it is important to develop a hybrid technique of these complementary techniques.
Keywords :
aluminium; anodisation; lithography; microelectrodes; nanotechnology; single electron transistors; Al; aluminum microelectrode; anodization process; lithography technique; nanostructure; self-organization process; single-electron transistor; Aluminum; Fabrication; Large scale integration; Lithography; Microelectrodes; Nanostructures; Photonics; Process control; Single electron transistors; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800755
Filename :
4800755
Link To Document :
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