DocumentCode :
2982875
Title :
OTP Memory for Low Cost Passive RFID Tags
Author :
Lee, Man Chiu ; Barsatan, Randy ; Chan, Mansun
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Hong Kong
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
633
Lastpage :
636
Abstract :
A CMOS-compatible zero-additional- mask one time programmable (OTP) non-volatile memory (NVM) for passive radio frequency identification (RFID) tags is presented. The selection of anti-fuse (AF) elements is discussed. The high voltage (HV) reliability issue for AF arrays is investigated and a high voltage switch drawing zero DC current is developed to tolerate the high voltages required for programming. Various AF memory cells and the HV switch were fabricated in standard TSMC 0.18 mum process. The breakdown of the AFs has been characterized and the functionality of the HV switch has been verified by measurement.
Keywords :
CMOS memory circuits; radiofrequency identification; radiofrequency integrated circuits; random-access storage; AF memory cells; CMOS-compatible zero-additional-mask; OTP memory; TSMC process; anti-fuse elements; high voltage reliability; high voltage switch; one time programmable non-volatile memory; passive RFID Tags; passive radio frequency identification tags; Anodes; CMOS process; Cathodes; Costs; Diodes; Nonvolatile memory; Passive RFID tags; RFID tags; Switches; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450204
Filename :
4450204
Link To Document :
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