Electrical Stability Improvement for Lanthanum Oxide Films by Nitrogen Incorporation using Plasma Immersion Ion Implantation

Author

Sen, Banani ; Yang, B.L. ; Wong, H. ; Kok, C.W. ; Bera, M.K. ; Chu, P.K. ; Huang, A. ; Kakushima, K. ; Iwai, H.

Author_Institution

City Univ. of Hong Kong, Kowloon

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

637

Lastpage

640

Abstract

The effect of nitrogen implantation on thin lanthanum oxide (La₂O₃) films grown by e-beam evaporation are investigated using X-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by plasma immersion ion-implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La₂O₃ network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric.

Keywords

X-ray photoelectron spectra; X-ray spectroscopy; lanthanum compounds; plasma immersion ion implantation; semiconductor thin films; X-ray photoelectron spectroscopy; capacitance-voltage measurement; current-voltage measurement; e-beam evaporation; electrical stability improvement; nitrogen implantation; plasma immersion ion implantation; thin lanthanum oxide film; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Lanthanum; Nitrogen; Plasma immersion ion implantation; Plasma measurements; Plasma stability; Plasma x-ray sources; Spectroscopy; High-k dielectric; lanthanum oxide; nitrogen; plasma immersion ion-implantation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450205

Filename

4450205