Title :
Electrical Stability Improvement for Lanthanum Oxide Films by Nitrogen Incorporation using Plasma Immersion Ion Implantation
Author :
Sen, Banani ; Yang, B.L. ; Wong, H. ; Kok, C.W. ; Bera, M.K. ; Chu, P.K. ; Huang, A. ; Kakushima, K. ; Iwai, H.
Author_Institution :
City Univ. of Hong Kong, Kowloon
Abstract :
The effect of nitrogen implantation on thin lanthanum oxide (La2O3) films grown by e-beam evaporation are investigated using X-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by plasma immersion ion-implantation (PII) is found to be quite low (about 3% near the surface). However, the introduction of nitrogen atoms into the La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric.
Keywords :
X-ray photoelectron spectra; X-ray spectroscopy; lanthanum compounds; plasma immersion ion implantation; semiconductor thin films; X-ray photoelectron spectroscopy; capacitance-voltage measurement; current-voltage measurement; e-beam evaporation; electrical stability improvement; nitrogen implantation; plasma immersion ion implantation; thin lanthanum oxide film; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Lanthanum; Nitrogen; Plasma immersion ion implantation; Plasma measurements; Plasma stability; Plasma x-ray sources; Spectroscopy; High-k dielectric; lanthanum oxide; nitrogen; plasma immersion ion-implantation;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450205
