Electronic Structure and Carrier Transport in Thin Graphene Films under a Vertical Electric Field Based on Ab-initio Calculations

We have made ab-initio calculations of graphene films up to four layers without/with a titanium electrode under an electric field, and a semiclassical Monte Carlo study on electron transport in monolayer and bilayer graphene. The ab-initio calculation is a very useful tool for not only material design, but also device design of grapheme films. We can expect graphene channel FETs to have better performance than conventional FETs and it will be possible to use them in millimeter- or sub-millimeter wave devices.