DocumentCode :
2982920
Title :
lnGaAs/InP HBTs with a buried subcollector fabricated by selective epitaxy
Author :
Frei, M.R. ; Hayes, J.R. ; Song, J.I. ; Caneau, C. ; Bhat, R. ; Cox, H.
Author_Institution :
Bellcore
fYear :
1992
fDate :
21-24 June 1992
Keywords :
Capacitance; Epitaxial growth; Etching; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Planarization; Springs; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
Type :
conf
DOI :
10.1109/DRC.1992.671884
Filename :
671884
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2982920
