• DocumentCode
    2982922
  • Title

    Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress

  • Author

    Lim, Paul ; Wang, Xinran ; Dai, Hongjie ; Nishi, Yoshio ; Harris, James

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., Stanford, CA
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    We have shown that CNT-FETs suffer under hot carrier stress on a similar level to those of conventional silicon FETs, despite its advantage in transport properties. More studies on CNT- FET operating reliability must therefore be conducted before it can be used for practical applications.
  • Keywords
    1/f noise; carbon nanotubes; field effect transistors; hot carriers; nanotube devices; 1/f noise degradation; carbon nanotube; field effect transistors; hot carrier stress; threshold voltage; CNTFETs; Degradation; FETs; Hot carrier effects; Hot carriers; Physics; Semiconductor device noise; Silicon; Stress; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800758
  • Filename
    4800758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982922