• DocumentCode
    2982940
  • Title

    Is there an Opportunity for Carbon Nanotube FETs in Very-High-Frequency Applications?

  • Author

    Chen, Li ; Pulfrey, D.L.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Univ. of British Columbia, Vancouver, BC
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    This paper presents simulations of fT for short-channel carbon nanotube field-effect transistors (CNFETs). To more accurately account for the propagation velocity in our effective-mass Schrodinger-Poisson solver, an energy-dependent effective mass m*(E) is introduced, but extending it to apply to the entire band structure, rather than only to the bandgap region.
  • Keywords
    carbon nanotubes; effective mass; energy gap; field effect transistors; nanotube devices; C; Schrodinger-Poisson solver; band structure; bandgap region; carbon nanotube field-effect transistors; energy-dependent effective mass; propagation velocity; short-channel CNFETs; Application software; CNTFETs; Contact resistance; Effective mass; FETs; Fabrication; High performance computing; Nanowires; Photonic band gap; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800759
  • Filename
    4800759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2982940