Title :
A 48,000 pixel, 590,000 transistor silicon retina in current-mode subthreshold CMOS
Author :
Andreou, Andreas G. ; Boahen, Kwabena A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
A second generation, contrast sensitive silicon retina is reported in this paper. The architecture and organization is inspired by the outer plexiform processing in the vertebrate retina. Current-mode subthreshold MOS design techniques are employed to obtain high performance and energetic efficiency. The system has been fabricated with 230×210 pixels on a 1×1 cm die in a 1.2 μm n-well double metal, double poly, digital oriented CMOS technology. The chip incorporates 590,000 transistors, 48,000 pixels, operating in subthreshold/transition region with power dissipation of 50 mW when powered from a 5 V power supply. The pixel has a frequency response of 100 kHz
Keywords :
CMOS analogue integrated circuits; VLSI; analogue processing circuits; computer vision; elemental semiconductors; frequency response; integrated circuit design; silicon; 1.2 micron; 100 kHz; 210 pixel; 230 pixel; 48300 pixel; 5 V; 50 mW; analogue VLSI system; analogue processing; contrast sensitive silicon retina; current-mode subthreshold CMOS; energetic efficiency; frequency response; n-well double-metal double-poly digital oriented CMOS technology; outer plexiform processing; power dissipation; subthreshold/transition region; CMOS technology; Computer architecture; Computer networks; MOSFETs; Physics computing; Retina; Silicon; Throughput; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-7803-2428-5
DOI :
10.1109/MWSCAS.1994.519199
