Title :
Enhanced surface segregation in sliding wear tracks
Author :
Kothari, R. ; Vook, R.W. ; Zhang, J.C. ; Zhu, M.D.
Author_Institution :
Dept. of Phys., Syracuse Univ., NY, USA
Abstract :
The effect of sliding wear on the rate of surface segregation of sulfur from an OFHC copper sample was investigated. This work was carried out in an ultra-high vacuum system having a residual gas pressure of 5×10-11 torr. Wear tracks were formed on OFHC Cu that had previously been annealed and argon-ion sputter cleaned. A bent pin was made to slide across the surface with a contact force of 25 g for 9000 cycles. No surface segregation was observed to occur as a result of forming the wear track. Subsequent in situ isothermal annealing between 310°C and 470°C produced S enhancement on the specimen surface. It was observed that the rate of S segregation on the wear track was much faster than off track up to approximately 390°C, where this rate decreased significantly. At higher temperatures, the rate of S segregation on track approximately equaled the off-track rate. The drop in the rate of S segregation on the track at 390°C is interpreted as due to annealing-out of the short-circuit diffusion paths associated with the defects formed when the wear track was made. The subsequent increase in S concentration at higher temperatures is due to the normal surface segregation phenomenon which occurs in annealed samples
Keywords :
copper; electrical contacts; sulphur; 310 to 470 degC; 5E-11 torr; 9000 cycles; OFHC Cu; S enhancement; S segregation; annealed samples; annealing-out; contact force; effect of sliding wear; high conductivity Cu; in situ isothermal annealing; rate of surface segregation; residual gas pressure; short-circuit diffusion paths; sliding wear tracks; surface segregation enhancement; ultra-high vacuum system; Annealing; Argon; Copper alloys; Heating; Magnetic analysis; Springs; Strips; Surface contamination; Testing; Wire;
Conference_Titel :
Electrical Contacts, 1989., Proceedings of the Thirty Fifth Meeting of the IEEE Holm Conference on
Conference_Location :
Chicago, IL
DOI :
10.1109/HOLM.1989.77914