DocumentCode :
2983117
Title :
High Speed InGaAs/InP Composite Collector Bipolar Transistors
Author :
Feygenson, A. ; Harnm, R.A. ; Ritter, D. ; Smith, P.R. ; Montgomery, R.K. ; Yadvish, R.D. ; Ternkin, H.
Author_Institution :
AT&T Bell Laboratories
fYear :
1992
fDate :
21-24 June 1992
Keywords :
Bandwidth; Bipolar transistors; Breakdown voltage; Current density; Impact ionization; Indium gallium arsenide; Indium phosphide; Microwave transistors; Physics; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
Type :
conf
DOI :
10.1109/DRC.1992.671885
Filename :
671885
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2983117
