Title :
High-Performance E-Mode AlGaN/GaN HEMTs with LT-GaN Cap Layer Using Gate Recess Techniques
Author :
Adachi, Tatsuhiko ; Deguchi, Tadayoshi ; Nakagawa, Atsushi ; Terada, Yutaka ; Egawa, Takashi
Author_Institution :
Adv. Technol. Center, New Japan Radio Co., Ltd., Fujimino
Abstract :
We have fabricated an E-mode LT-GaN/AlGaN/GaN HEMT by using a gate recess technique to reduce leakage. The gate recess process consisted of SiCl4 plasma etching, a N2 plasma treatment, and a BHF treatment. The fabricated device with 0.6 mum-long gate exhibited a Vth of +0.51 V, a gm of 236 mS/mm, and a BVoff of 131 V.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; gallium compounds; high electron mobility transistors; nitrogen; silicon compounds; sputter etching; wide band gap semiconductors; AlGaN-GaN; BHF treatment; N2; SiCl4; buffered hydrofluoric acid treatment; gate recess technique; high-performance E-mode HEMT; leakage reduction; low-temperature gallium nitride cap layer; plasma etching; plasma treatment; size 0.6 mum; voltage 0.51 V; voltage 131 V; Aluminum gallium nitride; Etching; Gallium nitride; Gate leakage; HEMTs; Leakage current; MODFETs; Plasma applications; Plasma devices; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800768
