Title :
Surface Passivation of AlGaN/GaN HEMTs
Author :
Rajan, Siddharth ; Pei, Yi ; Cheng, Zhen ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA
Abstract :
We developed a model to explain the mechanism of surface state dispersion and passivation for AlGaN/GaN HEMTs and verified it by investigating large signal operation as a function of SiNx thicknesses at different drain biases. The low dielectric constant helps to reduce the parasitic capacitance, and therefore increase gain. We showed that the use of a SiNx/SiO2 stack could provide lower parasitic capacitance and help remove DC-RF dispersion. Such designs will be critical to achieving excellent power performance for scaled AlGaN/GaN HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; passivation; permittivity; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC-RF dispersion; SiNx-SiO2; dielectric constant; high-electron mobility transistor; parasitic capacitance; surface passivation; surface state dispersion; Aluminum gallium nitride; Dielectric constant; Dielectric materials; Electric breakdown; Gallium nitride; HEMTs; MODFETs; Parasitic capacitance; Passivation; Predictive models;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800769
