High density focal plane signal processing using 3-D vertical interconnects

Author

Buchanan, B. ; Camperi-Ginestet, C. ; Morris, T. ; Brooke, M. ; DeWeerth, S. ; Jokerst, N. ; Allen, M.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

Volume

1

fYear

1994

fDate

3-5 Aug 1994

Firstpage

191

Abstract

A four by four array of GaAs P-i-N photodetectors was integrated onto a metalized silicon substrate and directly on top of an array of silicon circuits. The resultant focal plane processor at each location in the array converts the incident light intensity to a logarithmically encoded frequency signal

Keywords

III-V semiconductors; array signal processing; focal planes; gallium arsenide; image processing equipment; integrated circuit interconnections; optical interconnections; p-i-n photodiodes; 3D vertical interconnects; GaAs; P-i-N photodetectors; focal plane processor; focal plane signal processing; incident light intensity; logarithmically encoded frequency signal; optical interconnects; Array signal processing; Integrated circuit interconnections; Integrated circuit technology; Optical device fabrication; Optical interconnections; Optical signal processing; Photodetectors; Signal processing; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on

Conference_Location

Lafayette, LA

Print_ISBN

0-7803-2428-5

Type

conf

DOI

10.1109/MWSCAS.1994.519220

Filename

519220