DocumentCode
2983204
Title
Lasing characteristics of ZnO nanostructures with various morphologies
Author
Lee, Sang Hyun ; Jun-Seok Ha ; Lee, Hyojong ; Lee, Hyunjae ; Miyazaki, Hiroshi ; Goto, Tetsu ; Yao, Takafumi
Author_Institution
Center for Interdiscipl. Res., Tohoku Univ., Sendai
fYear
2008
fDate
23-25 June 2008
Firstpage
135
Lastpage
136
Abstract
Semiconductor nanostructures are very promising for future photonic devices owing to their unique optical properties which are quite dependent on their morphology. We report lasing characteristics of ZnO nanostructures with various morphologies including nano-wire, nano-taper, porous nano-wires, and nano pencils. Single crystalline ZnO nanostructures are synthesized using chemical vapor transport and condensation (CVTC) or aqueous reaction. Nonlinear optical properties of nanostructures are investigated. Optical pumping of ZnO nanostructures is carried out using micro photoluminescence (u-PL) system with the frequency-tripled output (355nm) of a Nd:YAG laser (repetition rate of 10 Hz and 6 ns pulse width). We observe an enhancement in laser emission intensity as the morphology of the nanowire changes the facet structure to porous structure. The variation of optical properties can be explained in terms of modified emission rate in ZnO nanowires with large surface area.
Keywords
II-VI semiconductors; condensation; crystal structure; laser beams; micro-optics; nanophotonics; nanostructured materials; neodymium; nonlinear optics; optical pumping; photoluminescence; solid lasers; wide band gap semiconductors; zinc compounds; CVTC method; YAG:Nd; ZnO; aqueous reaction; chemical vapor transport-and-condensation; laser emission intensity enhancement; lasing characteristics; microphotoluminescence system; nanostructure nonlinear optical properties; nanowire modified emission rate; optical pumping; semiconductor nanostructures; time 6 ns; wavelength 355 nm; Morphology; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical pumping; Photonic crystals; Pump lasers; Semiconductor nanostructures; Stimulated emission; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800771
Filename
4800771
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