Title :
Analytical Study of DC Characteristics of p-Si/Ã\x9f-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode
Author :
Huang, J.S. ; Lee, K.W. ; Wang, C.B. ; Huang, Y.S. ; Shiu, S.F. ; Liu, Y.J.
Author_Institution :
I-Shou Univ., Kaohsiung
Abstract :
The analytical method is developed to calculate the equilibrium and forward-bias conditions of p-Si/beta-FeSi2/n-Si DH LED. The Poisson´s equation is solved to investigate the equilibrium electric field and free carriers distributions. Diffusion and thermionic emission mechanisms are used to calculate I-V characteristics and ideal internal quantum efficiency.
Keywords :
Poisson equation; elemental semiconductors; light emitting diodes; silicon; thermionic emission; DH LED DC characteristics; I-V characteristics calculation; Poisson equation; Si-FeSi2-Si; diffusion mechanism; double-heterostructure light-emitting diode; forward-bias condition; internal quantum efficiency; thermionic emission mechanism; Charge carrier processes; Current density; DH-HEMTs; Light emitting diodes; Neodymium; Poisson equations; Semiconductivity; Semiconductor impurities; Space charge; Thermionic emission;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450222
