Fabrication and testing of beam supported AlN FBARs

Author

Callaghan, Lori A. ; Lughi, V. ; Requa, M.V. ; MacDonald, N.C. ; Clarke, D.R. ; Turner, K.L.

Author_Institution

Dept. of Mech. & Environ. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

23-27 Aug. 2004

Firstpage

18

Lastpage

21

Abstract

Thickness-activated piezoelectric resonators, also called film bulk acoustic resonators (FBAR), are fabricated using aluminum nitride films sputtered directly on <100> silicon. The geometry of the single port device is a suspended circular membrane of AlN sandwiched between metal electrodes and connected to the substrate with AlN beams. Known silicon microfabrication techniques are used to make the FBAR. A resonator with eight 100 μm long beams exhibits an effective electromechanical coupling factor of 4.6% and a quality factor of 200 at the first harmonic series frequency of 1.342 GHz.

Keywords

acoustic resonators; aluminium compounds; bulk acoustic wave devices; crystal resonators; electromechanical effects; micromachining; silicon; sputtering; thin film devices; 1.342 GHz; AlN; aluminum nitride films; beam supported FBAR; electromechanical coupling factor; film bulk acoustic resonators; metal electrodes; quality factor; silicon microfabrication techniques; single port device; sputtering; substrate; suspended circular membrane; thickness-activated piezoelectric resonators; Acoustic beams; Acoustic testing; Aluminum nitride; Biomembranes; Fabrication; Film bulk acoustic resonators; Geometry; Piezoelectric films; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International

ISSN

1075-6787

Print_ISBN

0-7803-8414-8

Type

conf

DOI

10.1109/FREQ.2004.1418423

Filename

1418423