DocumentCode :
2983237
Title :
Calculation of Bimolecular Recombination Coefficient and Internal Quantum Efficiency of Ã\x9f-FeSi2 DH LED
Author :
Huang, J.S. ; Huang, Y.S. ; Song, T.W. ; Lee, K.W. ; Tsai, W.C. ; Chang, H.J.
Author_Institution :
I-Shou Univ., Kaohsiung
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
705
Lastpage :
708
Abstract :
The analytical methods to calculate the bimolecular recombination coefficient B and internal quantum efficiency etamiddot of beta-FeSi2 DH LED are developed in this paper. The calculated B of beta-FeSi2 is 1.28 times 10-10 (cm3/sec), which value is similar to that of InP. The diffusion and thermionic emission mechanisms are used to calculate the free electron current densities and the rate equation is used to calculate the internal quantum efficiency. The effects that influence etamiddot values are discussed in this paper.
Keywords :
iron compounds; light emitting diodes; FeSi2; LED; bimolecular recombination coefficient; internal quantum efficiency; Current density; DH-HEMTs; Electron emission; Equations; Impurities; Indium phosphide; Light emitting diodes; Radiative recombination; Spontaneous emission; Thermionic emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450223
Filename :
4450223
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2983237
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