• DocumentCode
    2983237
  • Title

    Calculation of Bimolecular Recombination Coefficient and Internal Quantum Efficiency of Ã\x9f-FeSi2 DH LED

  • Author

    Huang, J.S. ; Huang, Y.S. ; Song, T.W. ; Lee, K.W. ; Tsai, W.C. ; Chang, H.J.

  • Author_Institution
    I-Shou Univ., Kaohsiung
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    705
  • Lastpage
    708
  • Abstract
    The analytical methods to calculate the bimolecular recombination coefficient B and internal quantum efficiency etamiddot of beta-FeSi2 DH LED are developed in this paper. The calculated B of beta-FeSi2 is 1.28 times 10-10 (cm3/sec), which value is similar to that of InP. The diffusion and thermionic emission mechanisms are used to calculate the free electron current densities and the rate equation is used to calculate the internal quantum efficiency. The effects that influence etamiddot values are discussed in this paper.
  • Keywords
    iron compounds; light emitting diodes; FeSi2; LED; bimolecular recombination coefficient; internal quantum efficiency; Current density; DH-HEMTs; Electron emission; Equations; Impurities; Indium phosphide; Light emitting diodes; Radiative recombination; Spontaneous emission; Thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450223
  • Filename
    4450223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983237