Title :
Electrically tunable and switchable film bulk acoustic resonator
Author :
Pang, Wei ; Zhang, Hao ; Yu, Hongyu ; Kim, Eun Sok
Author_Institution :
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The paper describes an electrically tunable and switchable film bulk acoustic resonator (FBAR) that is formed by integrating an FBAR with an electrostatic MEMS actuator. Around ∼0.8% tuning of the series resonant frequency (Δf≅18 MHz) at 2.3 GHz is experimentally obtained with an electrostatic actuation voltage varying between 12.2 and 27.5 V. Also, a switchable resonator with Q (quality) factor of greater than 100 at 2.2 and 4.0 GHz is experimentally demonstrated in a compact device area.
Keywords :
Q-factor; acoustic resonators; bulk acoustic wave devices; circuit tuning; electrostatic actuators; micromachining; thin film devices; 12.2 to 27.5 V; 2.2 to 4.0 GHz; FBAR; Q factor; electrically tunable film bulk acoustic resonator; electrostatic MEMS actuator; electrostatic actuation voltage; micromachining; quality factor; series resonant frequency; switchable film bulk acoustic resonator; Capacitors; Film bulk acoustic resonators; Filter bank; Micromechanical devices; Resonant frequency; Resonator filters; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International
Print_ISBN :
0-7803-8414-8
DOI :
10.1109/FREQ.2004.1418424
