Title :
Electrodeposition of CuInSe2 (CIS) absorber layer onto Au-glass substrates
Author :
Hung, C.J. ; Chen, J.N. ; Lai, W.R. ; Chou, D.W.
Author_Institution :
Nat. Univ. of Kaohsiung, Kaohsiung
Abstract :
Electrodeposition is emerging as a method for the synthesis of semiconductor thin films and nanostructures, especially chalcogenides and oxides. In this study, polycrystalline thin films of CuInSe2(CIS) were deposited by the electrodeposition method on Au coated glass substrate from an aqueous acidic solution containing 2 mM CuCl2, 7 mM InCl3 and 4 mM SeO2 adjusted to pH = 2. The optimal ED-CIS thin film is obtained from the growth solution containing 1 M TEA at the -1.7 V (SCE) after annealing at 230degC for 30 min. Compositing all experiments, we got know that it is no possibility to let CIS thin film grow up completely on a glass substrate, without mixing or annealing.
Keywords :
chlorine compounds; copper compounds; crystals; electrodeposition; gold compounds; indium compounds; nanoelectronics; selenium compounds; semiconductor growth; semiconductor thin films; CuInSe2; InCl3; SeO2; aqueous acidic solution; chalcogenides; electrodeposition; glass substrates; nanostructures; oxides; polycrystalline thin films; semiconductor thin films synthesis; temperature 230 C; thin film growth; time 30 min; voltage -1.7 V; Annealing; Computational Intelligence Society; Electrodes; Glass; Gold; Production; Semiconductor thin films; Sputtering; Substrates; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450224
