Title :
Bias-dependent photoluminescence intensity for the estimation of surface recombination velocity in compound-semiconductor solar cell
Author :
Yamamoto, Akio ; Ohkubo, Mitsugu ; Tashiro, Yoshihisa ; Hashimoto, Akihiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Fukui Univ., Japan
Abstract :
A new method for the estimation of surface recombination velocity (SRV) at an AR-coating/semiconductor interface has been proposed. The method is based on the comparison between theoretical and experimental curves for surface potential φS vs. PL intensity relationship for a metal-insulator (AR-coating)-semiconductor structure. The proposed method has been successfully applied to the SRV estimation for SiNX/n-InP structures. The anodic oxide of InP formed between a plasma-CVD SiNX layer and InP is found to protect the InP surface from the plasma damage introduced during the SiNX deposition and, as a result of that, to give a low SRV of 1×104 cm/s. This is in contrast with 1×107 cm/s for the case of a SiNX layer deposited directly onto the InP surface
Keywords :
III-V semiconductors; MIS structures; antireflection coatings; electron-hole recombination; indium compounds; optical films; photoluminescence; semiconductor device models; silicon compounds; solar cells; surface recombination; AR-coating/semiconductor interface; InP surface protection; SRV estimation; SiN-InP; SiNX deposition; SiNX/n-InP structures; anodic oxide; antireflection coating; bias-dependent photoluminescence intensity; compound-semiconductor solar cell; metal-insulator/semiconductor structure; plasma damage; plasma-CVD SiNX layer; surface potential; surface recombination velocity estimation; Equations; Indium phosphide; Insulation; Metal-insulator structures; Photoluminescence; Photovoltaic cells; Plasmas; Radiative recombination; Silicon compounds; Spontaneous emission;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520561
