Title :
A MEMS-based quartz resonator technology for GHz applications
Author :
Stratton, Frederic P. ; Chang, David T. ; Kirby, Deborah J. ; Joyce, Richard J. ; Hsu, Tsung-Yuan ; Kubena, Randall L. ; Yong, Yook-Kong
Author_Institution :
Sensors & Mater. Lab., Hughes Res. Labs., Malibu, CA, USA
Abstract :
We report on the development of a new MEMS quartz resonator technology that allows for the processing and integration of VHF to UHF high-Q oscillators and filters with high-speed silicon or III-V electronics. The paper describes the successful demonstration of new wafer bonding and dry plasma etching processes that make quartz-MEMS technology possible. We present impedance, Q, and temperature sensitivity data along with comparison to 3D harmonic and thermal analysis of VHF-UHF resonators. We also show Coventor simulation data of our first two- and three-pole monolithic crystal filter designs as well as a filter array layout which facilitates integration with front-end RF electronics and switches. Finally, we demonstrate a mechanical tuning technique for our resonators utilizing focused-ion-beam (FIB) technology.
Keywords :
UHF filters; VHF filters; circuit tuning; crystal resonators; focused ion beam technology; harmonic analysis; micromechanical resonators; resonator filters; sensitivity; sputter etching; thermal analysis; wafer bonding; 3D harmonic analysis; FIB technology; III-V electronics; MEMS quartz resonator technology; Q-factor; UHF filters; UHF oscillators; VHF filters; VHF oscillators; dry plasma etching; filter array layout; focused-ion-beam technology; front-end RF electronics; high-Q oscillators; impedance; mechanical tuning technique; monolithic crystal filter designs; silicon electronics; temperature sensitivity; thermal analysis; wafer bonding; III-V semiconductor materials; Micromechanical devices; Oscillators; Plasma applications; Plasma materials processing; Plasma simulation; Plasma temperature; Resonator filters; Silicon; Wafer bonding;
Conference_Titel :
Frequency Control Symposium and Exposition, 2004. Proceedings of the 2004 IEEE International
Print_ISBN :
0-7803-8414-8
DOI :
10.1109/FREQ.2004.1418425