High-Speed, Low-Temperature Integrated ZnO/Organic CMOS Circuits

The demand for low-cost, high mobility, thin-film technologies has generated particular interest in low-temperature- processed organic and metal oxide semiconductors. In addition, the development of CMOS circuits is likely to be important for low-power and battery-driven technologies. We have focused on ZnO, one of the most promising n- type semiconductors for thin-film application, but to date the formation of stable, high-mobility p-type at low temperatures has been challenging. We have previously demonstrated that by using a low-temperature (200degC) atmospheric pressure spatial ALD process, we can deposit uniform A1203 and ZnO films that result in high-mobility transistors (>15 cm2/V-s) and fast ring oscillators (<50 ns/stage). We have also demonstrated simple circuits using the high-mobility, solution-deposited, p-type organic semiconductor difluoro 5,ll-bis(triethylsilylethynyl) anthradithiophene (diF TES-ADT). We now report an integrated approach that combines these two technologies in a simple way to form low-temperature CMOS circuits.