DocumentCode
2983443
Title
Laterally vibrating-body double gate MOSFET with improved signal detection
Author
Grogg, D. ; Tekin, H.C. ; Badila-Ciressan, N.D. ; Mazza, M. ; Tsamados, D. ; Ionescu, A.M.
Author_Institution
Lab. of Micro/nano-Electron. Devices, Ecole Polytech. Fed. de Lausanne, Lausanne
fYear
2008
fDate
23-25 June 2008
Firstpage
155
Lastpage
156
Abstract
Laterally vibrating-body double-gate MOSFET that shows a +30 dB signal increase compared to an identical resonator operating with pure capacitive detection is reported. The double-gate MOSFET is fabricated on SOI substrate with silicon film thickness of 1.25 mum and laterally vibrating MOS transistor structure has two lateral fixed gates separated from the movable transistor body by gaps of 165 nm.
Keywords
MOSFET; elemental semiconductors; silicon; MOS transistor structure; SOI substrate; Si; Si-Jk; capacitive detection; lateral fixed gates; laterally vibrating-body double gate MOSFET; silicon film thickness; size 1.25 mum; MOSFET circuits; Motion detection; Nanobioscience; Nanoscale devices; Piezoresistance; Q factor; Resonance; Signal detection; Vibrations; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800781
Filename
4800781
Link To Document