Title :
Investigations of δ-doped InxAl1-xAs/InyGa1-yAs MHEMTs characteristics with different channel compositions
Author :
Chia-Jeng Chian ; Ciou-Sheng He ; Ke-Hua Su ; Su-Jen Yu ; Bo-i Chou ; An-Yung Kao ; Wei-Chou Hsu
Author_Institution :
Feng Chia Univ., Taichung
Abstract :
This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; InAlAs; InGaAs; MHEMT; channel compositions; in-ratio channel device; kink effects; metamorphic high electron mobility transistors; noise characteristics; power performance; voltage gain; Degradation; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Linearity; MODFETs; Performance gain; Voltage; mHEMTs; δ-doping; channel composition; metamorphic;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0636-4
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450233
