• DocumentCode
    2983444
  • Title

    Investigations of δ-doped InxAl1-xAs/InyGa1-yAs MHEMTs characteristics with different channel compositions

  • Author

    Chia-Jeng Chian ; Ciou-Sheng He ; Ke-Hua Su ; Su-Jen Yu ; Bo-i Chou ; An-Yung Kao ; Wei-Chou Hsu

  • Author_Institution
    Feng Chia Univ., Taichung
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    745
  • Lastpage
    747
  • Abstract
    This work provides comprehensive comparisons of the device characteristics, including the voltage gain, power performance, linearity, and noise characteristics, for the InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors with respect to different indium contents in the InGaAs channel. The kink effects in high In-ratio InGaAs channel were found to seriously degrade the device performance. On the other hand, low In-ratio channel device is beneficial to high gain and high linearity applications, while compromised design is needed for achieving high power performance in MHEMTs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; InAlAs; InGaAs; MHEMT; channel compositions; in-ratio channel device; kink effects; metamorphic high electron mobility transistors; noise characteristics; power performance; voltage gain; Degradation; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Linearity; MODFETs; Performance gain; Voltage; mHEMTs; δ-doping; channel composition; metamorphic;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0636-4
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450233
  • Filename
    4450233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983444