Title :
Recombination mechanisms at window/emitter interface in InP and other III-V semiconductor based solar cells
Author :
Lammasniemi, J. ; Tappura, K. ; Smekalin, K.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
Abstract :
The effect of various window layers for InP solar cells are studied. Window materials that have type I and type II alignments in the window/emitter interface are compared. All window materials that form a type II alignment with InP, such as Al0.20In0.80P, Ga0.20In0.80P, Al0.55In0.45As and Al0.60In0.40 P, cause a high interface recombination velocity, which deteriorates the carrier collection. This recombination takes place due to the spatially indirect quantum well transition between the triangular quantum wells formed in the interface. ZnSe as a window layer material with type I alignment does not have this problem, but decreased response in the short wavelength region is observed due to misfit dislocation induced trap sites. Future prospects for the window layer development for InP are discussed. The discussion is extended also to other III-V semiconductor based solar cell materials, such as Ga0.5In0.5P solar cells with AlxGa1-xAs window layers
Keywords :
II-VI semiconductors; III-V semiconductors; aluminium compounds; dislocations; electron-hole recombination; gallium compounds; indium compounds; semiconductor quantum wells; solar cells; zinc compounds; Al0.20In0.80P; Al0.2In0.8P; Al0.55In0.45As; Al0.60In0.40P; Al0.6In0.4P; AlxGa1-xAs window layers; Ga0.20In0.80P; Ga0.2In0.8P; Ga0.5In0.5P solar cells; III-V solar cells; InP; InP solar cells; ZnSe; carrier collection deterioration; high interface recombination velocity; misfit dislocation induced trap sites; recombination mechanisms; short wavelength region; spatially indirect quantum well transition; triangular quantum wells; type I alignment; type II alignment; window/emitter interface; Crystalline materials; III-V semiconductor materials; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Radiative recombination; Semiconductor materials; Zinc compounds;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520562
