Title :
A Spin-Capacitor with Paramagnetic Impurities Embedded in GaAs
Author :
Saha, D. ; Basu, D. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI
Abstract :
Spintronics is one of the several alternate technologies under consideration by the International Technology Roadmap for Semiconductors for processing information in fundamentally new ways that will be required beyond the ultimate scaling limits of silicon-based complementary metal-oxide-semiconductor (CMOS) technology. Semiconductor spintronics is particularly more attractive because of very long spin coherence time in semiconductors compared to that in metals [2]. Here we demonstrate, for the first time, a novel spin-based capacitor based on interaction between mobile spin-polarized electrons and bounded paramagnetic spins. It is observed that the paramagnetic impurities embedded in a GaAs channel can be preferentially polarized by spin-polarized carriers injected from a ferromagnet in a spin-valve configuration.
Keywords :
CMOS integrated circuits; III-V semiconductors; capacitors; ferromagnetic materials; gallium arsenide; CMOS technology; GaAs; ferromagnets; mobile spin-polarized electrons; paramagnetic impurities; semiconductor spintronics; silicon-based complementary metal-oxide-semiconductor; spin-capacitor; spin-valve configuration; ultimate scaling limits; CMOS technology; Electrons; Gallium arsenide; Impurities; Molecular beam epitaxial growth; Paramagnetic materials; Polarization; Steady-state; Substrates; Temperature;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800786
