DocumentCode

2983590

Title

High Speed InP/InGaAs P-n-p Heterojunction Bipolar Transistors

Author

Lunardi, L.M. ; Chandrasekhar, S. ; Harem, R.A.

Author_Institution

AT&T Bell Laboratories

fYear

1992

fDate

21-24 June 1992

Keywords

Frequency response; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1992. Digest. 50th Annual

Conference_Location

Cambridge, MA, USA

Type

conf

DOI

10.1109/DRC.1992.671887

Filename

671887