One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit

We present a study on the scaling of conventional as well as tunneling nanowire/tube field-effect transistors towards the quantum capacitance limit. As it turns out conventional FETs exhibit a scaling benefit in this limit in terms of the power delay product. In addition, the appearance of short channel-like effects due to a parasitics charge pile-up can be avoided. Scaling tFETs towards the QCL allows obtaining regular transistor output characteristics and an on-state performance similar to the performance of cFETs.