Fabrication and study of low temperature polycrystalline silicon TFT technology applied to step doping LIGBT

Author

Lin, Jyh-Ling ; Chen, Huang-Jen

Author_Institution

Hua Fan Univ., Taipei

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

785

Lastpage

788

Abstract

Thin film transistor lateral insulated gate bipolar transistors (TFT-LIGBTs) were fabricated combining the technology of thin film transistor and the power structure used excimer laser anneal in this paper. Excimer laser anneal and substrate heating at 400degC simultaneously for TFT-LIGBT to integrate with the driving circuit of system-on-panel (SOP) and other circuit in the future. The maximum breakdown voltage of step doping TFT-LIGBT after excimer laser annealing is 280 V with L_drift=35 mum. The ON/OFF current ratio is 1.59times10⁶. It is higher than solid phase crystallization (SPC)-LIGBT 1.74 about 106 times at V_anode=30 V with L_drift=35 mum and even more than TFT-LDMOS 1.42times10⁵ 10 times.

Keywords

crystals; driver circuits; excimer lasers; insulated gate bipolar transistors; laser beam annealing; silicon; thin film transistors; driving circuit; excimer laser anneal; lateral insulated gate bipolar transistor doping; polycrystalline silicon; power structure; system-on-panel; temperature 400 C; thin film transistor; voltage 280 V; voltage 30 V; Annealing; Circuits; Doping; Insulated gate bipolar transistors; Optical device fabrication; Power lasers; Silicon on insulator technology; Substrates; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450243

Filename

4450243