DocumentCode :
2983670
Title :
Modeling of Feedthrough Capacitance for MEMS Folded-Beam Silicon Carbide Resonators
Author :
Chang, W.T.
Author_Institution :
Nat. Univ. of Kaohsiung, Kaohsiung
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
789
Lastpage :
792
Abstract :
This manuscript analyzes the feedthrough capacitance of folded-beam MEMS-based silicon carbide (SiC) lateral resonators. Additionally, feedthrough capacitance for MEMS resonators via electrical measurement was estimated by matching simulated with measured Bode plots from a network analyzer. The feedthrough capacitance was 0.1-1 pF, as determined by Bode plots using feedthrough capacitance as a key input for the measured Bode plot.
Keywords :
micromechanical resonators; network analysers; silicon compounds; wide band gap semiconductors; Bode plots; MEMS folded-beam resonators; SiC; capacitance 0.1 pF to 1 pF; electrical measurement; feedthrough capacitance; network analyzer; Capacitance measurement; Circuit simulation; Distributed control; Dry etching; Electric variables measurement; Micromechanical devices; Parasitic capacitance; Scanning electron microscopy; Silicon carbide; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450244
Filename :
4450244
Link To Document :
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