DocumentCode
2983682
Title
Coplanar Contact Pattern for single InAs Nanowire FET
Author
Blekker, K. ; Matiss, A. ; Münstermann, B. ; Regolin, I. ; Li, B. ; Do, Q.T. ; Prost, W. ; Tegude, F.J.
Author_Institution
Solid State Electron. Dept., Univ. of Duisburg-Essen, Duisburg
fYear
2008
fDate
23-25 June 2008
Firstpage
181
Lastpage
182
Abstract
We report on the development of coplanar contact pattern for the RF-characterisation of nanoscaled devices. A contact layout exhibiting a low parasitic capacitance is developed using electrostatic field theory calculations. The improved pad- and coupling capacitance has been experimentally verified based on scattering parameter measurements and small signal parameter extraction of a single nanowire transistor.
Keywords
arsenic compounds; field effect transistors; indium compounds; nanowires; InAs; RF-characterisation; coplanar contact pattern; electrostatic field theory calculations; nanoscaled devices; nanowire transistor; scattering parameter measurements; single nanowire FET; small signal parameter extraction; Calibration; Dielectric substrates; FETs; Frequency; Inductance; Nanoscale devices; Parasitic capacitance; Scattering parameters; Solid state circuits; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2008
Conference_Location
Santa Barbara, CA
ISSN
1548-3770
Print_ISBN
978-1-4244-1942-5
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2008.4800793
Filename
4800793
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