DocumentCode :
2983739
Title :
Measurement of Residual Stresses in Thin Films using Spiral Microstructures
Author :
Li, C.-J. ; Li, C.-T.
Author_Institution :
Nat. Kaohsiung First Univ. of Sci. & Technol., Kaohsiung
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
805
Lastpage :
808
Abstract :
This research uses spiral microstructures to measure both the residual mean normal stress and gradient stress of the thin films for MEMS devices based on analytical solutions. The geometric or dimensional deformations are utilized to determine the residual stresses. ANSYS simulation and experiments are conducted to verify the measurement.
Keywords :
crystal microstructure; deformation; internal stresses; micromechanical devices; thin films; ANSYS simulation; MEMS devices; deformations; gradient stress; residual stress measurement; spiral microstructures; thin films; Microelectromechanical devices; Microstructure; Residual stresses; Spirals; Strain measurement; Stress measurement; Structural beams; Substrates; Thin film devices; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450248
Filename :
4450248
Link To Document :
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