Title :
Measurement of Silicon Nanowires Carrier Mobility and Its Size Dependence
Author :
Gunawan, O. ; Sekaric, L. ; Majumdar, A. ; Rooks, M. ; Appenzeller, J. ; Sleight, J.W. ; Guha, S. ; Haensch, W.
Author_Institution :
Res. Div., T.J. Watson Res. Center, IBM, Yorktown Heights, NY
Abstract :
We perform the first direct capacitance measurements of silicon nanowires (Si-NWs) and the determination of field carrier mobilities (for both electrons and holes) and their NW size dependence in undoped-channel Si-NW field-effect transistors (FETs) at room temperature. We use a two-FET method for accurate extraction of the intrinsic channel resistance and capacitance of the Si-NWs. The devices used in this study were fabricated using a top-down method to create Si-NW FETs with up to 1000 wires in parallel for increasing the raw capacitance while maintaining excellent control on device dimensions and series resistance. We then study and compare the NW mobility values with those of the known universal mobility curves for bulk silicon.
Keywords :
capacitance measurement; elemental semiconductors; field effect transistors; nanowires; silicon; Si; capacitance measurements; field carrier mobilities; intrinsic channel capacitance; intrinsic channel resistance; nanowire size dependence; silicon nanowires; temperature 293 K to 298 K; two-FET method; undoped-channel Si-NW field-effect transistors; Capacitance measurement; Charge carrier processes; Electron mobility; FETs; Nanowires; Performance evaluation; Silicon; Size measurement; Temperature dependence; Wires;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800797
