DocumentCode :
2983743
Title :
KrF laser ablation target analysis and thin film deposition
Author :
Spindler, H.L. ; Gilgenbach, Ronald M. ; Sugawara, H. ; Lash, J.S. ; Kovaleski, Scott ; Ang, L.K. ; Lau, Y.Y.
Author_Institution :
Dept. of Nucl. Eng. & Radiol. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
1996
fDate :
3-5 June 1996
Firstpage :
171
Lastpage :
172
Abstract :
Summary form only given. Mechanisms of KrF laser (248 nm, 1.2 J, 40 ns) ablation have been investigated by electron microscope analysis of targets and thin-films deposited on silicon substrates. Laser ablated (Al and Fe) targets show the formation of conical microstructures, which increase the laser absorption, but also generate larger particulate (5-15 /spl mu/m) on deposited films. The development of these microstructures has been investigated as a function of the number of incident KrF laser pulses (up to 4000). A diagnostic utilizing dye laser scattering from ablated particulate supports the evidence that KrF laser-damaged targets produce more and larger particulate than smooth targets. The time of flight from laser scattering signals gives velocities of 100 m/s for the smaller particulate and 25 m/s for the largest particulate. The effects of substrate heating on thin film deposition are being investigated. A theory of laser absorption by rough surfaces has been derived.
Keywords :
pulsed laser deposition; 1.2 J; 248 nm; 40 ns; Al; Fe; KrF; KrF laser; KrF laser pulses; Si; ablated particulate; conical microstructure; dye laser scattering; electron microscope analysis; laser ablation target analysis; laser absorption; laser scattering signals; laser-damaged targets; microstructures; rough surfaces; smooth targets; substrate heating; thin film deposition; thin-films; time of flight; Absorption; Electron microscopy; Laser ablation; Laser theory; Microstructure; Pulsed laser deposition; Scattering; Semiconductor thin films; Sputtering; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
Conference_Location :
Boston, MA, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-3322-5
Type :
conf
DOI :
10.1109/PLASMA.1996.550723
Filename :
550723
Link To Document :
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