• DocumentCode
    2983745
  • Title

    Efficiency increase of silicon-on-insulator Raman lasers by reduction of free-carrier absorption in tapered waveguides

  • Author

    Krause, Michael ; Renner, Hagen ; Brinkmeyer, Ernst

  • Author_Institution
    Technische Univ. Hamburg-Harburg, Germany
  • Volume
    2
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    1548
  • Abstract
    The efficiency of continuous-wave SOI Raman lasers can he increased significantly by using a waveguide with a longitudinally varying (as opposed to a constant) effective area, thus reducing the impact of free-carrier absorption.
  • Keywords
    Raman lasers; silicon-on-insulator; waveguide lasers; Si-SiO2; continuous-wave silicon-on-insulator Raman lasers; free-carrier absorption reduction; tapered waveguides; Absorption; Laser excitation; Laser modes; Optical waveguides; Power generation; Power lasers; Pump lasers; Silicon on insulator technology; Stimulated emission; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.202188
  • Filename
    1573254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983745