Title :
V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band
Author :
Chu, Rongming ; Shen, Likun ; Fichtenbaum, Nicholas ; Brown, David ; Chen, Zhen ; Keller, Stacia ; Mishra, Umesh
Author_Institution :
ECE Dept., Univ. of California, Santa Barbara, CA
Abstract :
In this paper, we present our development of a novel HEMT which uses V-shaped gate geometry to reduce the field crowding at the gate edge, and pushes the high power performance of the deeply recessed HEMTs toward higher operating voltages. The V-gate GaN HEMTs were fabricated by using a highly manufacturable approach, and demonstrated X-band power performance superior to devices made by other technologies.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; V-shaped gate geometry; Aluminum gallium nitride; Bandwidth; Dispersion; Gallium nitride; Gate leakage; HEMTs; Lithography; MODFETs; Surface charging; Voltage;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800804
