• DocumentCode
    2983953
  • Title

    Enhancement-mode 130 nm InAs p-HEMTs having fT of 403 GHz and fmax of 470 GHz fabricated using atomic-layer-etching technology

  • Author

    Kim, T.-W. ; Kim, D.-H. ; Park, S.D. ; Shin, S.-H. ; Yeom, G.Y. ; Jang, J.H. ; Song, J.-I.

  • Author_Institution
    Center for Distrib. Sensor Networks, Gwangju Inst. of Sci. & Technol. (GIST), Gwangju
  • fYear
    2008
  • fDate
    23-25 June 2008
  • Firstpage
    211
  • Lastpage
    212
  • Abstract
    High-performance 130 nm E-mode InAs p-HEMTs is fabricated using the Ne-based ALET and the buried Pt gate technology. Results from the combination of the improved gate-to-channel aspect ratio achieved by the buried Pt gate technology show that performance of the device is remarkable and the improved carrier transport property is achieved using the ALET technology.
  • Keywords
    III-V semiconductors; etching; high electron mobility transistors; indium compounds; platinum; InAs; Pt; atomic-layer-etching technology; buried Pt gate technology; carrier transport property; frequency 403 GHz; gate-to-channel aspect ratio; p-HEMT; size 130 nm; FETs; Gold; HEMTs; Indium compounds; Indium phosphide; Integrated circuit technology; MODFETs; Metallization; Scattering parameters; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2008
  • Conference_Location
    Santa Barbara, CA
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1942-5
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2008.4800807
  • Filename
    4800807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2983953