Title :
Enhancement-mode 130 nm InAs p-HEMTs having fT of 403 GHz and fmax of 470 GHz fabricated using atomic-layer-etching technology
Author :
Kim, T.-W. ; Kim, D.-H. ; Park, S.D. ; Shin, S.-H. ; Yeom, G.Y. ; Jang, J.H. ; Song, J.-I.
Author_Institution :
Center for Distrib. Sensor Networks, Gwangju Inst. of Sci. & Technol. (GIST), Gwangju
Abstract :
High-performance 130 nm E-mode InAs p-HEMTs is fabricated using the Ne-based ALET and the buried Pt gate technology. Results from the combination of the improved gate-to-channel aspect ratio achieved by the buried Pt gate technology show that performance of the device is remarkable and the improved carrier transport property is achieved using the ALET technology.
Keywords :
III-V semiconductors; etching; high electron mobility transistors; indium compounds; platinum; InAs; Pt; atomic-layer-etching technology; buried Pt gate technology; carrier transport property; frequency 403 GHz; gate-to-channel aspect ratio; p-HEMT; size 130 nm; FETs; Gold; HEMTs; Indium compounds; Indium phosphide; Integrated circuit technology; MODFETs; Metallization; Scattering parameters; Wet etching;
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2008.4800807
