Title :
A small signal model for dual channel high electron mobility transistors
Author :
Gupta, Ravi ; El Nokali, M.
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
A technique is presented to calculate the total channel charge of a dual channel high electron mobility transistor. The current voltage characteristics and the small signal parameters gm and gD of the device are derived. The effects of parasitic drain and source resistances and channel length modulation are included
Keywords :
high electron mobility transistors; semiconductor device models; channel length modulation; current voltage characteristics; dual channel high electron mobility transistors; parasitic drain resistance; parasitic source resistance; small signal model; small signal parameters; total channel charge; Electron mobility; Gallium arsenide; HEMTs; Ionization; MODFETs; Poisson equations; Polynomials; Schottky barriers; Taylor series; Voltage;
Conference_Titel :
Circuits and Systems, 1994., Proceedings of the 37th Midwest Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-7803-2428-5
DOI :
10.1109/MWSCAS.1994.519384
