DocumentCode :
2984090
Title :
Spin Precession in Oblique Magnetic Fields
Author :
Li, Jing ; Huang, Biqin ; Appelbaum, Ian
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE
fYear :
2008
fDate :
23-25 June 2008
Firstpage :
221
Lastpage :
222
Abstract :
The authors have measured spin precession from devices with 350 micron-thick undoped silicon transport layers in an oblique magnetic field synthesized by a static magnetic field Bpar and a varied magnetic field Bperp. Experimental results of spin precession, measured by changing the fixed in-plane magnetic field magnitude at zero device misalignment are also presented. Repeating this study at a fixed device misalignment angle of 30 degrees is also shown as is holding the fixed field constant at different misalignment angles is shown . The authors modeled the device spin detector current using a drift-diffusion model which in linear response is proportional to the projection of final spin direction (after transport) on the measurement axis determined by detector magnetization. Under the influence of an oblique magnetic field, spin is induced to precess around the magnetic field, which produces asymmetric Hanle curves (due to broken symmetry of spin direction or spin precession chirality, or both) that are different from those measured in single-axis magnetic fields. The simulated spin precession measurements are presented and compared favorably to the experimental data . In conclusion, the Hanle spin precession signal is suppressed when a fixed in-plane magnetic field is used in conjunction with a varied magnetic field perpendicular to the plane of the spin-transport device, and the signal becomes asymmetric when the device is misaligned with respect to magnetic fields.
Keywords :
Hanle effect; carrier mobility; elemental semiconductors; magnetic field effects; magnetoelectronics; semiconductor devices; silicon; spin polarised transport; Hanle curves; Hanle spin; Si; detector magnetization; device spin detector current; drift-diffusion model; oblique magnetic fields; size 350 micron; spin precession; static magnetic field; undoped silicon transport layers; varied magnetic field; zero device misalignment; Bismuth; Detectors; Electric variables measurement; Electrons; Magnetic circuits; Magnetic field measurement; Magnetic fields; Magnetic modulators; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2008
Conference_Location :
Santa Barbara, CA
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1942-5
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2008.4800812
Filename :
4800812
Link To Document :
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