Title :
VTH -Extractors Based Readout Circuit of ISFET with Temperature Compensation
Author :
Liu, Tai-Tsun ; Chung, Wen-Yaw ; Cruz, Febus Reidj G ; Tsai, You-Lin ; Pijanowska, Dorota G. ; Torbicz, Wladyslaw ; Grabiec, Piotr B. ; Jaroszewicz, Bohdan
Author_Institution :
Chung-Yuan Christian Univ., Chung-Li
Abstract :
-This paper proposes a novel readout circuit of ion sensitive field effect transistor (ISFET) with temperature compensation using two threshold voltage (VTH) extractor circuits. The first VTH extractor with ISFET gives the pH reading and the second VTH extractor with depletion-type MOSFET (DMOSFET) provides the temperature compensation. The entire circuit uses only 20 transistors and dissipates a power of 889.3 muW. This design offers a sensitivity of 54 mV/pH and an improved temperature coefficient (T.C.) of 0.02 mV/degC.
Keywords :
MOSFET; compensation; ion sensitive field effect transistors; ISFET; depletion-type MOSFET; ion sensitive field effect transistor; readout circuit; temperature compensation; threshold voltage extractor circuits; Biomedical monitoring; Biomembranes; Energy consumption; FET integrated circuits; Industrial electronics; MOSFET circuits; Operational amplifiers; Tellurium; Temperature sensors; Threshold voltage; ISFET; Temperature compensation; VTH extractor;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450271
