DocumentCode
2984166
Title
Advanced two-photon absorption devices for high speed switching and demultiplexing applications
Author
Wang, L. ; Chen, W.L. ; Jain, R. ; Watts, R. ; Harvey, J.
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
3
fYear
2005
fDate
22-27 May 2005
Firstpage
1596
Abstract
We report the study of two-photon absorption in advanced quantum-confined devices. In preliminary experiments, a dynamic range of over 4 decades of signal intensity is observed for the TPA signal in InAs/InGaAs quantum confined devices.
Keywords
III-V semiconductors; demultiplexing; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical fibre communication; optical switches; semiconductor devices; two-photon processes; InAs-InGaAs; InAs-InGaAs quantum confined devices; advanced quantum-confined devices; demultiplexing applications; high speed switching; two-photon absorption devices; Absorption; Bandwidth; Demultiplexing; Fiber lasers; Indium gallium arsenide; Optical devices; Quantum dots; Semiconductor materials; Semiconductor waveguides; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.202210
Filename
1573276
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