Title :
Advanced two-photon absorption devices for high speed switching and demultiplexing applications
Author :
Wang, L. ; Chen, W.L. ; Jain, R. ; Watts, R. ; Harvey, J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We report the study of two-photon absorption in advanced quantum-confined devices. In preliminary experiments, a dynamic range of over 4 decades of signal intensity is observed for the TPA signal in InAs/InGaAs quantum confined devices.
Keywords :
III-V semiconductors; demultiplexing; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical fibre communication; optical switches; semiconductor devices; two-photon processes; InAs-InGaAs; InAs-InGaAs quantum confined devices; advanced quantum-confined devices; demultiplexing applications; high speed switching; two-photon absorption devices; Absorption; Bandwidth; Demultiplexing; Fiber lasers; Indium gallium arsenide; Optical devices; Quantum dots; Semiconductor materials; Semiconductor waveguides; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN :
1-55752-795-4
DOI :
10.1109/CLEO.2005.202210
